High performance carbon nanotube electron beams with gate electrode optimization

Abstract

The effect of gate mesh electrode on the electron extraction from carbon nanotube emitters for high performance electron beam were studied. In the case of low electron emission regime ( 1mA/cm2) gate electrode materials and structure start to effects on electron emission current and then it makes failure in electron beams. The effects were confirmed with DC-pulse driving with different duty cycle to reduce current load on gate mesh.