High nitrogen pressure solution growth of GaN in multi feed‐seed configuration

Abstract

AbstractThe results of High Nitrogen Pressure Solution (HNPS) growth of GaN in multi feed‐seed (MFS) configuration are presented. The idea of this configuration is based on the conversion of the free standing HVPE‐GaN crystals (seeds) to the free standing HNPS‐GaN of much higher quality than the seeds. A new arrangement of the seeds in the MFS configuration is shown. The influence of the experimental conditions (i.e. growth temperature, temperature gradient) on the growth rate, growth mode and electrical properties of HNPS‐GaN is presented. The regrowth procedure is introduced in order to increase the lattice bowing radii of the HNPS‐GaN crystals and finally obtain crystalographically flat (bowing radius of 30 meters) pressure grown GaN substrates (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)