Abstract
Recent results of High Nitrogen Pressure Solution (HNPS) growth of GaN crystals deposited on and separated from 2 inch, and smaller, GaN substrates grown by Hydride Vapor Phase Epitaxy (HVPE) have been presented. The influence of the c-plane bowing in the initial substrate on quality, rate and mode of growth by HNPS method has been analyzed in details.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have