High Ms Fe16N2 thin film with Ag under layer on GaAs substrate

Xiaowei Zhang,Meiyin Yang,Yanfeng Jiang,Lawrence F Allard,Jian-Ping Wang

doi:10.1063/1.4943236

Xiaowei Zhang, Meiyin Yang + Show 3 more

Open Access

https://doi.org/10.1063/1.4943236

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Abstract

(001) textured Fe16N2 thin film with Ag under layer is successfully grown on GaAs substrate using a facing target sputtering (FTS) system. After post annealing, chemically ordered Fe16N2 phase is formed and detected by X-ray diffraction (XRD). High saturation magnetization (Ms) is measured by a vibrating sample magnetometer (VSM). In comparison with Fe16N2 with Ag under layer on MgO substrate and Fe16N2 with Fe under layer on GaAs substrate, the current layer structure shows a higher Ms value, with a magnetically softer feature in contrast to the above cases. In addition, X-ray photoelectron spectroscopy (XPS) is performed to characterize the binding energy of N atoms. To verify the role of strain that the FeN layer experiences in the above three structures, Grazing Incidence X-ray Diffraction (GIXRD) is conducted to reveal a large in-plane lattice constant due to the in-plane biaxial tensile strain.

Highlights

It is well known that high saturation magnetization (Ms) material is in great need for both scientific research purpose and industry application
To examine the crystallinity of the partially ordered Fe16N2 thin film, X-ray diffraction (XRD) is performed to explore the out of plane texture
The fingerprint peak at 2θ=28.5◦, which can be indexed to Fe16N2 (002), can be observed with robust peak intensity. This proves the existence of ordered Fe16N2 phase, which arises due to the superlattice diffraction given by the ordered Fe-N planes as a result of the disorder-to-order transformation after the post annealing process

Summary

Introduction

It is well known that high saturation magnetization (Ms) material is in great need for both scientific research purpose and industry application. (001) textured Fe16N2 thin film with Ag under layer is successfully grown on GaAs substrate using a facing target sputtering (FTS) system.

Results

Conclusion