Abstract
High permittivity HfO 2 films have been deposited directly on silicon using the thermal decomposition of the hafnium nitrato precursor Hf(NO 3) 4. These films were then used to build n- and p-channel field effect transistors. N+ poly, P+ poly, and Pt have been used as gate electrodes. The mobility of the poly gate devices is comparable to that of SiO 2/Si, however, these devices show a thicker equivalent oxide thickness than the Pt devices. The effect of the composition of the films on their electrical performance is discussed.
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