High-mobility electron systems in remotely-doped InSb quantum wells

Abstract

We have achieved high-quality InSb/Al x In 1− x Sb quantum-well structures which enable magneto-transport experiments that reveal phenomena unique to InSb. Multiple quantum-well structures exhibit mobilities as high as 380 000 cm 2 V −1 s −1 at low temperature and 41 000 cm 2 V −1 s −1 at room temperature. The integer quantum Hall effect is observed in structures containing a single quantum well. No magneto-resistance minima are observed at fractional Landau-level filling factors but the system remains metallic at filling factors at least as low as 1 2 .