Abstract
We have fabricated InSb quantum-well structures with high electron mobilities that are limited by scattering due to crystalline defects and remote ionized Si dopants. The integer quantum Hall effect is observed in these structures and has an unusual temperature dependence. Interband exciton transitions in a parabolic quantum well are used to determine an InSb/Al0.09In0.91Sb conduction-band offset ratio of 57%±2%.
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