Abstract
We investigated the effect of several high Miller index axial and planar channels on implant profiles of boron at several energies. Wafers were implanted with electrostatic scanning at orientations that resulted in the ion beam sweeping through alignment with these channels. Therma-Wave maps identified channeled and de-channeled locations, which were analyzed with SIMS and compared. We conclude that the {620} planar channels and the 〈12X〉 and 〈13X〉 axial channels, which may be encountered during implantation at 7° tilt, have no measurable effect on as-implanted boron profiles. However, the 〈125〉 axial channel at 24.1° tilt 18.4° twist produced measurable channeling effects.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call