Abstract
The first report on a GaN-on-Si high electron-mobility transistor (HEMT) differential oscillator is presented. A high output power and low phase noise, 2.45 GHz cross-coupled pair voltage-controlled oscillator (VCO), using 0.35 μm GaN HEMT on silicon substrate technology is described. The VCO can be tuned, between 2.41 GHz and 2.53 GHz, and has a low phase noise, of –129.09 dBc/Hz, at 1 MHz offset. The output power of the VCO is 18.31 dBm at 2.53 GHz from a 15 V power supply, while the total die size was 0.87 mm2. The high output power and low phase noise are obtained for wireless power charger applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.