Abstract
The first report on a GaN-on-Si high electron-mobility transistor (HEMT) differential oscillator is presented. A high output power and low phase noise, 2.45 GHz cross-coupled pair voltage-controlled oscillator (VCO), using 0.35 μm GaN HEMT on silicon substrate technology is described. The VCO can be tuned, between 2.41 GHz and 2.53 GHz, and has a low phase noise, of –129.09 dBc/Hz, at 1 MHz offset. The output power of the VCO is 18.31 dBm at 2.53 GHz from a 15 V power supply, while the total die size was 0.87 mm2. The high output power and low phase noise are obtained for wireless power charger applications.
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