Abstract
A 50 MHz---1 GHz low-noise amplifier circuit with high linearity for IEEE 802.22 wireless regional area network is presented. It was implemented without any inductor and offers a differential output for balun use. Noise canceling and linearity boosting techniques were combined to improve the amplifier performance in such a way that they can be separately optimized. Linearity was improved using diode-connected transistors. The amplifier was implemented in a 130 nm CMOS process in a compact 136 μm × 71 μm area. Simulations are presented for post-layout schematics for two classes of design: one for best linearity, another for best noise figure (NF). When optimized for best linearity, simulation results achieve a voltage gain >23.7 dB (power gain >19.1 dB), a NF 3.3 dBm (7.6 dBm max.) and an input power reflection coefficient S11 24.7 dB (power gain >19.8 dB), a NF ?0.3 dBm and an S11 <?11 dB. Monte Carlo simulation results confirm low sensitivity to process variations. Also a low sensitivity to temperature within the range ?55 to 125 °C was observed for Gain, NF and S11. Power consumption is 18 mW under a 1.2 V supply.
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