Ultra-wideband LNA Design Using Series Gate Inductor Technique in 65nm CMOS

Abstract

A high-gain ultra-wideband(UWB)low noise amplifier (LNA) is proposed based on the advanced 65nm CMOS technology. The first common gate (CG) stage provides wideband impedance matching and high gain at low frequencies. The high gain at high frequencies is achieved by adding a gate inductor at the cas code transistor of the second common source (CS) stage. The flat band response is achieved using resistive feedback technique. Post-layout simulation shows that the wideband LNA provides 15.1-19.1dB power gain at 3.1-10.6GHz and 3.6-5.3 dB noise figure (NF) while drawing 7.8mw from 1.2V power supply, including the output buffer. Compared with other counterparts, the proposed LNA achieves higher power gain and moderate power consumption.