Abstract
In this paper, we examine the high-k gate stack formation on strained SiGe for p-channel MOSFET applications by comparing two different surface passivations. Experimental results show that although both surface nitridation and silicon passivation provide good MOS capacitors on SiGe substrates, the devices with ultra-thin Si passivation layer provides high hole mobility than those with surface nitridation. It is believed that nitrogen incorporation during surface nitrdation may degrade hole mobility.
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