Abstract
Surface passivation with a higher band gap shell has been shown to successfully reduce the density of surface states at the surface of nanowires. The effect of ultra-thin InP passivation layers of thicknesses ~3-5 nm coated on InAsP nanowires is investigated and compared to bare InAsP nanowires. The ultrathin passivation exhibited an improvement in carrier lifetime and mobility by approximately a factor of 3. Surface recombination velocity was decreased by at least a factor of 3.
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