Ge pMOSFET with MOCVD HfO/sub 2/ gate dielectric

Nan Wu Nan Wu,D.S.H Chan,D.L Kwong,J.K.O Sin,C.H Tung,Qinichun Zhang Qinichun Zhang,Chunxiang Zhu Chunxiang Zhu,A.Y Du,L.K Bera,M.F Li,N Balasubrarnanian,A Chin,Haitao Liu Haitao Liu

doi:10.1109/isdrs.2003.1272084

Ge pMOSFET with MOCVD HfO/sub 2/ gate dielectric

Nan Wu Nan Wu, D.S.H Chan + Show 11 more

https://doi.org/10.1109/isdrs.2003.1272084

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Publication Date: Jan 1, 2003

Citations: 1

Affiliation: National University of Singapore, Hong Kong University of Science and Technology, University of Hong Kong, Institute of Microelectronics, National Yang Ming Chiao Tung University

#Ge Substrate #Hole Mobility + Show 8 more

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Abstract

Ge is a attractive material for alternative channel materials due to its high electron and hole mobility. Ge substrate is also a potential materials for supply scaling down to meet ITRS requirements. This work reports the Ge pMOSFET device fabrication and pMOSFET characteristics. The Ge substrate used in this work are (100) Sb doped n-type wafers with a resistivity of 1.04/spl sim/0.08 ohm*cm. Ge pMOSFET's electrical performance like I-V curves, transfer curves and hole mobility are improved by surface nitridation and passivation of HfO/sub 2/ gate dielectrics.

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