Year-end Sale % OFF 
Abstract
Organometallic tris(methylcyclopentadienyl)erbium and water were successfully exploited as precursors for the atomic layer deposition (ALD) of Er 2 O 3 thin films. Deposition studies were carried out in the temperature range 175-450 °C, where Si(100) and soda-lime glass were used as substrates. ALD-type growth mechanism could be verified at relatively low deposition temperatures of 250 °C and 300 °C, where a high growth rate (1.5 A per cycle) for an ALD process was obtained. The deposited Er 2 O 3 films were smooth and very uniform, and contained only low concentrations of carbon and hydrogen as impurities. The films were crystalline with the (111) orientation of the cubic phase dominating. The effective permittivity of the Er 2 O 3 /native SiO 2 insulator stack was approximately 10.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
