Abstract
Atmospheric pressure organometallic chemical vapor deposition has been used to grow InP/GaInAs heterojunction bipolar transistors from trimethylgallium, trimethylindium, arsine and phosphine sources. The doping characteristics of the layers comprising the device has been studied using diethylzinc and diethyltelluride as the dopants. It is shown that both Zn and Te, while behaving nearly ideally in GaInAs, exhibit anomalous behavior in InP. In spite of this, InP/GaInAs heterojunction bipolar transistors with gains as high as 5000 have been fabricated. The estimated minority carrier diffusion length in the base is 7.5 μm which indicates that the GaInAs is of extremely high quality.
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