Abstract
Thin-film transistor (TFT) circuits with unprecedented high-frequency performances were fabricated. Based on sub-micron TFTs on phase-modulated-eximer-laser-annealing (PMELA) crystallized silicon films, low-voltage-differential-signaling (LVDS) receivers and low-noise-amplifiers (LNAs) were fabricated. The LVDS receivers can handle a data rate as high as 800 Mbps, and the maximum power gain of the LNAs is 19.8 dB at 1.33 GHz.
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