Abstract
Thin-film transistor (TFT) circuits with unprecedented high-frequency performances were fabricated. Based on sub-micron TFTs on phase-modulated-eximer-laser-annealing (PMELA) crystallized silicon films, low-voltage-differential-signaling (LVDS) receivers and low-noise-amplifiers (LNAs) were fabricated. The LVDS receivers can handle a data rate as high as 800 Mbps, and the maximum power gain of the LNAs is 19.8 dB at 1.33 GHz.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.