Abstract
High-frequency characteristics of a highly functional InP-based resonant-tunneling high electron mobility transistor (RTHEMT) are reported in this paper. Based on small-signal S-parameter measurement, a maximum current gain cutoff frequency f/sub T/ of 28.6 GHz and a maximum power gain cutoff frequency f/sub max/ of 90 GHz were obtained for an RTHEMT with a 0.7 /spl mu/m gate length. Large-signal characteristics are also reported, showing the potential of RTHEMT's for frequency multiplier applications featuring high-order harmonics multiplication with high conversion efficiency.
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