High-field magnetoresistance and hall effect in aluminium single crystals. Influence of Fermi surface and defect structure

Abstract

Abstract The influence of electron scattering on the high-field galvanomagnetic properties was investigated by measuring transverse magnetoresistance and Hall effect in an Al single crystal with different defect structures. A systematic variation of the number and the kind of defects was achieved by low-temperature electron irradiation and subsequent annealing at different temperatures. Obeying Kohler's rule, the high-field magnetoresistance does not change with defect concentration. However, it depends sensitively on the defect configuration. On the other hand the anisotropy of the magnetoresistance is observed to be independent of the defect configuration. That means the anisotropy is solely determined by the anisotropy of the Fermi surface. New evidence for explaining the linear high-field magnetoresistance by magnetic breakdown was found and orientation-dependent geometry effects on the transverse magnetoresistance are discussed.