Abstract
Low-field Hall coefficient R and transverse magnetoresistance Delta rho / rho 0 were measured in Al single crystals. A definite defect structure (statistically distributed Frenkel pairs) was created in the specimens by low-temperature electron irradiation. This defect structure could then be changed in a controlled way by annealing at different temperatures. Eliminating the influence of defect concentration with the aid of the Kohler representation thus allowed the dependence of R and Delta rho / rho 0 on the defect structure to be investigated. Various effects of the Fermi surface geometry and of the scattering mechanism on R and Delta rho / rho 0 are discussed on the basis of simple equations for the low-field Hall coefficient and magnetoresistance.
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