Abstract
Monte Carlo results are presented for the velocity-field characteristics of holes in (i) unstrained Si, (ii) strained Si and (iii) strained SiGe using a full band model as well as an analytic nonparabolic and anisotropic band structure description. The full band Monte Carlo simulations show a strong enhancement of the drift velocity in strained Si up to intermediate fields, but yield the same saturation velocity as in unstrained Si. The drift velocity in strained SiGe is also significantly enhanced for low fields while being substantially reduced in the high-field regime. The results of the analytic band models agree well with the full band results up to medium field strengths and only the saturation velocity is significantly underestimated.
Highlights
The progress in epitaxial growth techniques of unstrained and strained SiGe layers have led to intensified efforts to explore the potential performance enhancements in SiGe based devices
The aim of this paper is twofold: On one hand, we perform for the first time full band Monte Carlo simulations for strained Si and SiGe in the high-field regime
The full band model for strained Si or SiGe is obtained by nonlocal empirical pseudopotential calculations including spin-orbit interaction [9]
Summary
The progress in epitaxial growth techniques of unstrained and strained SiGe layers have led to intensified efforts to explore the potential performance enhancements in SiGe based devices. The aim of this paper is twofold: On one hand, we perform for the first time full band Monte Carlo simulations for strained Si and SiGe in the high-field regime. We present a simple analytic hole band model and evaluate its range of validity. Mobility obtained with the parabolic fits to the full band model.
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