Abstract
High field electron transport in n-InP/GaInAs two-dimensional electron gas (2DEG) is studied at liquid helium temperature. In this experiment two kinds of samples are used: the first has a thick enough GaInAs layer to contain a three-dimensional gas; the other has a thin GaInAs layer containing only a 2DEG on the GaInAs side of the heterojunction. In the sample with the thick GaInAs layer, Gunn oscillations are observed above 2.2 kV/cm. In the sample with the thin GaInAs layer, Gunn oscillations do not occur and an irreversible decrease of the sheet concentration of 2DEG is obtained after applying a high electric field. The highest measured drift velocity of this sample is 4.4×107 cm/s at 3.8 kV/cm.
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