High-energy Si implantation into InP:Fe

Abstract

High-energy Si implantations were performed into InP:Fe at energies ranging from 0.5 to 10 MeV for a dose of 3×1014 cm−2, and at 3 MeV for the dose ranging from 1×1014 to 2×1015 cm−2. The first four statistical moments of the Si-depth distribution, namely range, longitudinal straggle, skewness, and kurtosis, were calculated from the secondary-ion mass spectrometry (SIMS) data of the as-implanted samples. These values were compared with the corresponding trim-89 calculated values. SIMS depth profiles were closely fitted by Pearson IV distributions. Multiple implantations in the energy range from 50 keV to 10 MeV were performed to obtain thick n-type layers. Variable temperature/time halogen lamp rapid thermal annealing (RTA) cycles and 735 °C/10-min furnace annealing were used to activate the Si implants. No redistribution of Si was observed for the annealing cycles used in this study. Activations close to 100% were obtained for 3×1014-cm−2 Si implants in the energy range from 2 to 10 MeV for 875 °C/10-s RTA. Transport equation calculations were used to interpret low activation results for high dose Si implants. Polaron electrochemical C–V profiling was used to obtain carrier concentration depth profiles. The lattice quality of the as-implanted and annealed material was evaluated by performing x-ray rocking curve measurements.