Abstract
We present a mode-locked semiconductor laser oscillator that emits few picosecond pulses (5-8ps at a repetition rate of 379MHz and wavelength of 1064nm) with record peak power (112W) and pulse energy (0.5nJ) directly out of the oscillator (with no amplifier). To achieve this high power performance we employ a high-current broad-area, spatially multi-mode diode amplifier (0.3×5mm), placed in an external cavity that enforces oscillation in a single spatial mode. Consequently, the brightness of the beam is near-ideal (M2 = 1.3). Mode locking is achieved by dividing the large diode chip (edge emitter) into two sections with independent electrical control: one large section for gain and another small section for a saturable absorber. Precise tuning of the reverse voltage on the absorber section allows to tune the saturation level and recovery time of the absorber, providing a convenient knob to optimize the mode-locking performance for various cavity conditions.
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