Abstract
In this study, the application of atmospheric pressure thermal plasma jet (TPJ) annealing for impurity activation in 4H–SiC is reported. The activation of phosphorus atoms implanted at 300°C in 4H–SiC by TPJ irradiation and analysis of its crystallinity are investigated. At the maximum annealing temperature of 1630°C, the minimum resistivity value is 3.1 mΩ·cm and the maximum carrier concentration value is 2.0 × 1020 cm−3. Orientation analysis suggests that the sample implanted at 300°C was recrystallized to a 4H–SiC(0001) structure after 1630°C annealing. Furthermore, a significant increase in the carrier concentration was observed with the increasing cooling rate during the activation annealing process. Rapid cooling may suppress the impurity deactivation. These results suggest that short-time high-temperature TPJ irradiation annealing is effective for P dopant activation in 4H–SiC.
Published Version
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