Abstract
We formed nanometer-scale Pt dots on SiO2 by thermal plasma jet (TPJ) irradiation and demonstrated the feasibility of TPJ millisecond annealing for controlling the areal density of the dots. 2–10-nm-thick Pt/quartz was exposed to an Ar plasma jet at peak temperatures of 455–695 °C for a duration of 1–2 ms. When the Pt/quartz was annealed by TPJ irradiation without any extra heating, the Pt nanodot density was controlled in the range of 7.8 ×1010 to 2.0 ×1011 cm-2 by changing the annealing temperature and the number of irradiations. These results imply that ultra-rapid annealing using a TPJ plays an important role in enhancing the surface migration of Pt atoms in order to reduce the interface energy of Pt/quartz.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
