Abstract
50-nm-thick amorphous Si films doped with 4.3 x 10^17 cm-3 phosphorus atoms were crystallized by thermal plasma jet (TPJ) irradiation. The electrical conductivity (sigma) of the crystallized films ranges from 1.2 x 10^-5 - 1.7 x 10^-2 S/cm, while Si films crystallized by excimer laser annealing (ELA) show much smaller sigma of 1.6 - 4.5 x 10^-6 S/cm regardless of laser fluence. This result can be interpreted that the defect density in the TPJ crystallized films is much smaller than that in ELA Si films. By treating the films with hydrogen plasma for 60 s at 250oC, sigma of TPJ crystallized films increased to 1.4 x 10^-2 - 1.1 S/cm, while it was 3.0 x 10^-6 - 6.5 x 10^-3 S/cm in the case of films crystallized by ELA. This result indicates that a short period hydrogenation is effective to improve the electrical characteristics of TPJ crystallized Si films.
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