Abstract
The antimony surfactant-mediated growth of InAs∕GaAs quantum dots (QDs) by metal organic chemical vapor deposition was investigated. The authors show that the growth of InAs QDs on Sb:GaAs(100) can result in both a strong increase of the dot density, up to 1011cm−2, and the suppression of coalescence. They achieved InAs∕Sb:GaAs QDs with density above 4×1010cm−2, ground-state emission above 1.30μm, and enhanced photoluminescence intensity at room temperature compared to that of InAs∕GaAs QDs. Remarkably, InAs∕Sb:GaAs QDs do not exhibit an emission blueshift under annealing at temperatures as high as 630°C, contrary to InAs∕GaAs QDs.
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