Abstract
We report on the growth of self-assembled InAs∕Sb:GaAs quantum dots (QDs) on silicon substrate by antimony-mediated metal organic chemical vapor deposition. We obtained arrays of InAs∕Sb:GaAs∕Si QD chains along [0−11], with density as high as 7×1010cm−2 and low coalescence. These QDs yield emission in the 1.3μm band. The temperature dependence of the photoluminescence intensity indicates the good optical quality of the grown QDs. Together, these results are promising for the fabrication of InAs∕GaAs QD laser on silicon substrate.
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