Abstract
In0.14Ga0.86As/(GaAs)5(AlAs)5 Quantum Wires (QWRs) were naturally formed in a thin In0.14Ga0.86As/(GaAs)5(AlAs)5 Quantum Well (QW) with a regularly corrugated AlAs/In0.14Ga0.86As upper interface (a period of about 40 nm) and a flat In0.14Ga0.86As/AlAs lower interface grown on (775)B-oriented GaAs substrates by molecular beam epitaxy. The QWRs were formed side by side with a high density of 2.5×105 QWRs cm−1. A photoluminescence from the QWRs formed in the QW with an average well width of 2.2 nm, which have a cross section of about 40×4 nm2, showed a strong polarization dependence [the polarization degree P=(I‖−I⊥)/(I‖+I⊥)=0.19], indicating good one-dimensionality of those QWRs. Full width at half maximum of the PL peak from the In0.14Ga0.86As/(GaAs)5(AlAs)5 QWRs was as small as 17 meV at 14 K, which is smaller than any of other naturally synthesized QWRs reported so far.
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