Abstract
Strained In0.15Ga0.85As/GaAs quantum wires (QWRs) are naturally formed on a (553)B-oriented GaAs substrate by molecular beam epitaxy. The QWR structure with a corrugated upper interface and a flat lower interface is directly confirmed by atomic force microscopy. The average lateral period and step height of (553)B QWRs are revealed to be about 25 and 1.6 nm, respectively. Accordingly the density of (553)B QWRs is as high as 4.0×105 cm−1, which is several times larger than that of QWR arrays fabricated by the finest lithography. Moreover, the (553)B QWRs are intensively studied by photoluminescence (PL). In comparison with the reference (100) In0.15Ga0.85As/GaAs quantum wells, the PL peaks of the (553)B QWRs show slight redshifts and strong polarization dependence at 12 K, indicating a two-dimensional carrier confinement effect due to the corrugated structure. The narrow full width at half maximum of the PL peak at λ=861 nm is as small as 9.2 meV, which indicates the high uniformity and good optical quality of the (553)B QWRs.
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