Abstract
Temperature dependence of photoluminescence (PL) was investigated for high-density and highly uniform GaAs/(GaAs) 4 (AlAs) 2 quantum wires (QWRs) grown on a (7 7 5)B GaAs substrate by molecular beam epitaxy, which are naturally formed in an average 2.1 nm width GaAs/(GaAs) 4(AlAs) 2 quantum well (QW) with a corrugated upper interface (a lateral period of 12 nm and a vertical amplitude of 1.2 nm) and a flat lower interface. As temperature increases in the range of T⩾60 K, PL intensity of the (7 7 5)B GaAs/(GaAs) 4(AlAs) 2 QWRs decreases more slowly and is several times larger compared with that of a GaAs/(GaAs) 4(AlAs) 2 QW simultaneously grown on a (1 0 0) GaAs substrate, indicating reduction of the nonradiative decay process of exicitons in the (7 7 5)B QWRs. The full width at half maximum of the PL peak from the (7 7 5)B QWRs is almost independent of temperature above 60 K, while that of the (1 0 0) QW increases in proportion to about k B T above 50 K. These results strongly indicate the one-dimensional characteristics of the (7 7 5)B QWRs as theoretically predicted.
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