High Current Ion Implanter "LUXiON"

Abstract

A new high current Ion implanter has been developed. Superior high beam current and high beam controllability are achieved by a novel beam transportation system, which extracts a high current long ion beam from an ion source, then transports the beam keeping its shape by a novel tall beamline in a vertical direction and mechanically scans a wafer in a horizontal direction. The ion beam has about 300 mm homogeneous current distribution along the vertical direction. Typical ion species like 11B+, 31P+, 75As+, 72Ge+ and 12C+ can be extracted. The beamline, which includes a large pole gap mass analyzing magnet to mass-analyze the ion beam extracted from the ion source and an electrostatic type energy filter having multiple electrodes to eliminate energy contamination, was newly designed for transporting the ion beam from the ion source to an endstation with high transmission rate. LUXiON has further several features. The ion beam size in the horizontal direction can be intentionally controlled by applying appropriate voltage to each electrode of the energy filter to control ion implantation damage on the wafer. Also, the energy filter precisely controls beam incident angle to the wafer in the horizontal direction by tuning multiple electrode voltages. The beam uniformity and the vertical beam incident angle can be controlled by multi locations gas inlet scheme in ion source and vertically aligned electrode arrays in the beamline. In addition these arrays can control also vertical beam incident angle and vertical beam angle distribution. LUXiON is a novel high current ion implanter with superior productivity and high beam controllability, which is applicable for next generation devices.