Abstract
We investigated basic characteristics of InN films grown on glass substrates and fabricated thin-film transistors with them. It was found that highly c-axis oriented InN films can be obtained by the surface modification of glass substrates with amorphous HfO2 layers. The electron mobility of the c-axis-oriented InN on HfO2/glass reached 330 cm2 V−1 s−1. We demonstrated that a field effect transistor based on the ultrathin film of highly c-axis-oriented InN exhibited an on/off current ratio as high as 106; in addition, this InN-on-glass device supported current densities greater than 14 mA mm−1. The results indicate that InN-based ultrathin-film transistors are promising electronic devices that enable high-current densities to be achieved on glass substrates.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
