Abstract
In this paper, a trench metal oxide semiconductor field-effect transistor (UMOSFET) with source oxide is proposed and studied by Synopsys TCAD software. The proposed structure has source trenches and optimized characteristics by changing parameters (source-trench depth, source oxide thickness, source Poly-Si thickness) constituting the source trench to improve device characteristics. As a result, source-trench depth, source Poly-Si thickness, and source oxide thickness were optimized to 2.4 μm, 2.3 μm, and 100 nm, respectively. Also, the proposed device has a higher breakdown voltage of 274 V compared to the conventional structure. In addition, the electric field is dispersed by the source-trench, and thus, the electric field applied to the gate oxide of the device is reduced to 0.7 MV/cm. This reduction improves the reliability of the device. The on-resistance was found to be reduced by 47% when a device with the same breakdown voltage was designed.
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