Abstract
A metallic polypyrrole film has been formed on a p-type Si substrate by means of an anodization process. An investigation of the formed polymer/ pSi Schottky diodes has been made. The polypyrrole polymer provides a good rectifying contact to the p-Si semiconductor. The current-voltage (barrier height Φ b0 = 0.84 eV) and capacitance-voltage ( Φ b0 = 0.94 eV) characteristics of the devices are significantly improved with increasing Φ b0 and decreasing the ideality factor ( n = 1.20) after a polymer melt processing step. These values of Φ b0 are significantly larger than those of conventional Schottky diodes. Furthermore this study shows that owing to its room temperature processing the high barrier-metallic polypyrrole/ pSi structures can be useful for deep level characterisation of p-Si.
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