Abstract
The nonpolymeric organic compound rhodamine-101 (Rh101) film on a n-type Si or p-type Si substrate has been formed by means of the evaporation process and the Sn/rhodamine-101/Si contacts have been fabricated. The Sn∕Rh101∕n-Si and Sn∕Rh101∕p-Si contacts have rectifying contact behavior with the barrier height (BH) values of 0.714 and 0.827eV, and with ideality factor values of 2.720 and 2.783 obtained from their forward bias current-voltage (I-V) characteristics at room temperature, respectively. It has been seen that the BH value of 0.827eV obtained for the Sn∕Rh101∕p-Si contact is significantly larger than BH values of the conventional Sn∕p-Si Schottky diodes and metal/interfacial layer/Si contacts. Thus, modification of the interfacial potential barrier for metal/Si diodes has been achieved using a thin interlayer of the Rh101 organic semiconductor; this has been ascribed to the fact that the Rh101 interlayer increases the effective barrier height by influencing the space charge region of Si.
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