Abstract
The intrinsic short carrier lifetime (∼5 ps) makes the quantum-well infrared photodetector (QWIP) well suited for high speed and high frequency applications. In such cases, since lasers are commonly used, a high dark current can be tolerated. The most important parameter is then the absorption efficiency. For system simplicity and potential wide use, room temperature operation is desirable. Using GaAs/AlGaAs QWIPs, high absorption (∼100%) and up to room temperature operation are achieved in devices having high doping densities and 100 quantum wells.
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