Abstract
Quantum wells, especially those made of GaAs and InP related compounds, have enabled several unique infrared devices. A very successful example is the quantum well infrared photodetector (QWIP). Thermal imaging using focal plane arrays (FPAs) based on QWIPs is the main established existing application. In a different direction, the intrinsic short carrier lifetime (approximately 5 ps) makes the QWIP well suited for high speed and high frequency applications. In such cases, since lasers are commonly used, a high dark current can be tolerated. The most important parameter is then the absorption efficiency. For system simplicity and potential wide use, near room temperature operation is desirable. An optimization study is carried out and reported here, using GaAs/AlGaAs QWIP structures. High absorption (approximately 100%) and up to room temperature operation are achieved in devices having high doping densities and 100 quantum wells.
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