Abstract
We have investigated the effects of annealing temperature on the physical and electrical properties of the HfO 2 film deposited by an atomic layer deposition (ALD) method for high- k gate oxides in thin-film-transistors (TFTs). The ALD deposition of HfO 2 directly on the Si substrate at 300 °C results in the formation of thin HfSi x O y interfacial layer between Si and HfO 2. The subsequent low temperature N 2-annealing of HfO 2 films (i.e., 300 °C) using a rapid thermal processor (RTP) improves the overall electrical characteristics of HfSi x O y –HfO 2 films. Based on the current work, we suggest that HfO 2 film deposited by the ALD method is suitable for high- k gate oxides in TFTs, which have to be fabricated at low temperature.
Published Version
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