Abstract
The microstructural characteristics and electrical and chemical properties of TiAlN films deposited by the atomic layer deposition (ALD) method were investigated. The growth rate of TiAlN film was measured to be 1.67 Å/cycle. TiAlN film deposited by ALD has a B1(NaCl) structure with a lattice parameter of 4.20 Å. The chlorine content in TiAlN film was below the detection limit of Auger electron spectroscopy. TiAlN film showed the columnar structure with a resistivity of about 400 μΩ cm. The sheet resistance increased abruptly after annealing at 650 °C due to the formation of a high resistivity Cu-silicide phase at the interface between the TiAlN and Si substrate. The failure of the ALD TiAlN barrier layer was observed by an etch-pit test after annealing at 600 °C for 1 h. TiAlN films deposited by the ALD method exhibited excellent film properties and improved barrier characteristics compared to other chemical vapor deposition methods.
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