Abstract
The authors report on electron emission from HfC(310) operating in extended Schottky emission mode. Data are gathered from test stands as well as through operation in a commercial scanning electron microscope. Emitter end-form geometry consisted of rounded, via electrochemical etching, and truncated, via ion milling. The authors demonstrate high angular intensity operation of >60 mA/sr especially for the rounded end-form emitters. Advantages include robustness of the material, which is not reliant on material supply as is the case with standard ZrO/W(100) sources. Hence, operation is available over a much larger range of temperatures, fields, and potentially pressures. Operation in a commercial scanning electron microscope gave ten times higher beam currents for identical operational parameters over a standard Schottky source.
Published Version
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