Abstract
As a structural counterpart of graphite, hexagonal boron nitride (hBN) exhibits distinct advantages over bulk hBN, including high thermal conductivity and electrical insulation, exceptional strength, low friction coefficient as well as high elastic modulus, which make it a unique material for wide variety of applications. Despite this, the controlled and scalable synthesis of hBN, maintaining a stoichiometric balance between boron and nitrogen atoms during crystal growth has remained a daunting challenge in the last few decades. Herein, a simple yet efficient method was employed to optimize the heat-treatment of urea, thiourea, and boric acid at melting temperatures. This resulted in the synthesis of hBNs at very low temperatures in a single step, under normal atmospheric conditions. The FESEM images of hBN produced from both urea and thiourea showed the formation of hexagonal layered structure of boron nitrides. The high magnified TEM images clearly depicted the lattice fringes within the hBN. The overall results confirmed that V-shape of urea and thiourea might have helped to produce hBNs in large scale, bypassing the use of substrates, high temperature or pressure.
Published Version
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