Abstract
The optical, luminescence and electrical properties of α-ZnSe heterolayers obtained by the method of isovalent replacement are investigated. The high quantum yield of luminescence η = 10-12% in the short-wave region is established. The dominant role of excitons annihilation and interband transitions of free charge carriers is revealed. The surface-barrier structures of Ni-α-ZnSe, whose spectral region of photosensitivity is ħω = 2.70-3.75 eV, was made. The hexagonal modification of the structure of the obtained heterolayers causes their polarization properties of reflection and photosensitivity.
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