Abstract
Wafer bonding technology is one of the most effective methods for high-quality thin-film transfer onto different substrates combined with ion implantation processes, laser irradiation, and the removal of the sacrificial layers. In this review, we systematically summarize and introduce applications of the thin films obtained by wafer bonding technology in the fields of electronics, optical devices, on-chip integrated mid-infrared sensors, and wearable sensors. The fabrication of silicon-on-insulator (SOI) wafers based on the Smart CutTM process, heterogeneous integrations of wide-bandgap semiconductors, infrared materials, and electro-optical crystals via wafer bonding technology for thin-film transfer are orderly presented. Furthermore, device design and fabrication progress based on the platforms mentioned above is highlighted in this work. They demonstrate that the transferred films can satisfy high-performance power electronics, molecular sensors, and high-speed modulators for the next generation applications beyond 5G. Moreover, flexible composite structures prepared by the wafer bonding and de-bonding methods towards wearable electronics are reported. Finally, the outlooks and conclusions about the further development of heterogeneous structures that need to be achieved by the wafer bonding technology are discussed.
Highlights
Wafer bonding is a popular technology that can integrate two or more kinds of materials into one heterogeneous system
This indicates that a high-quality gallium nitride (GaN)/silicon carbide (SiC) heterogeneous structure can be obtained by the surface activated bonding (SAB) method combined with a laser lift-off process
It demonstrates the effectiveness of PZT thin film transfer and the feasibility of biocompatible electronics relying on such composite structures
Summary
Wafer bonding is a popular technology that can integrate two or more kinds of materials into one heterogeneous system. As for the fabrication of the LiNbO3 -on-insulator (LNOI) platform, wafer bonding provides effective technical support for the on-chip heterogeneous integration of LiNbO3 thin film This idea has been confirmed to be feasible by designing and preparing high-speed modulators on LNOI wafers, which are fabricated using the wafer direct bonding technology to peel off the single-crystal thin film from the bulk LiNbO3 crystals [21,22]. This will be beneficial for the generation applications beyond 5G communication. Fabrication of Si- and Ge-Based Thin Film-on-Insulators via Wafer Bonding Method
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