Abstract
Wafer bonding is an enabling technology for the fabrication of advanced electronic devices based on the integration of high-quality heterogeneous materials. This paper summarizes our work on wafer-level bonding of nitride semiconductors and its application to electronic devices. Our bonding technology uses a thin silicon dioxide (SiO2) or Benzocyclobutene (BCB) interlayer to enhance the bonding, and it has been applied to the fabrication of three different kinds of devices: hybrid chips where Si (100) MOSFETs are integrated with GaN transistors in close proximity; N-face GaN transistors on Ga-face grown material for high frequency applications; and high power GaN power switches with record breakdown characteristics.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
