Abstract
GaN-based light-emitting diodes (LEDs) grown on Si(111) substrates were fabricated with a vertical electrode method by using wafer bonding technology. The fabricated vertical LEDs showed a lower operating voltage and larger light output power than conventional LEDs due to enhancement in current spreading and reduction in tensile strain. The light output power of the vertical structured LEDs was 2.6 times higher than that of conventional LEDs, with an operating voltage at 20 mA reduced from 3.5 to 3.2 V.
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