Abstract
In this paper, two representative heterogeneous integrated applications with great performance based on epitaxial layer transfer process are reported. The SiC integrated Si PIN limiter has shown power handling capability of 150W (continues Wave) and 370W (long pulse) at 5.4GHz, which shows outstanding performance than conventional GaAs limiter. While the SiC integrated InP PIN photodetector has shown a high performance of 3-dB bandwidth over 67GHz, and 42% increasing of the optical responsibility over 0.51 A/W compared to the traditional PD. The results verified great potential of transistor level heterogeneous integration for high performance electronic and photonic devices.
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