Abstract
Heteroepitaxial growth of alkaline earth fluoride films on Si substrates and Si, Ge, and GaAs films on the fluoride/Si structures, is reviewed. Growth of single crystalline fluoride films on Si and CaF2/Si interface characteristics are first discussed. Then the usefulness of novel heteroepitaxial technologies, the thin amorphous layer predeposition method and the electron beam irradiation method, is demonstrated in the growth of semiconductor films on fluoride layers. Finally, use of vicinal (100) substrates in conjunction with rapid thermal annealing treatments is shown to be effective in growing high quality GaAs(100) films on fluoride layers.
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