Abstract
Single-crystalline GaAs films with lattice parameters near the bulk crystal were made on Si substrates without intermediate layers by showering Ga + ion beams simultaneously with As + ion beams on the Si substrate. RHEED studies showed that about 50 Å of the Si substrate was amorphized by the ion beam showering. The amorphous layers served to relieve the lattice mismatch between the GaAs films and the Si substrates.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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